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S1 Fig. This is the schematic figure. The potential applications of ultrahigh electrostrain piezoceramic materials and their preferred devices. S2 Fig. This is the schematic figure. The functional properties of lead-free piezoelectric BiFeO3-BaTiO3 ceramic and desired parameters. S3 Fig. Data set for Fig. 3 (a) The X-ray diffraction patterns in the suggested range of 2θ =  10° − 60°, (b) magnified view for (111) peak at 2θ =  38° − 40° and (200) peak at 2θ =  38° − 40°, and (c, d) XRD Rietveld refinements patterns of x =  0.00(BC), 0.01(BC) samples for Si-modified BF30BT solid solutions. S4 Fig. Data set for Fig. 4 (a-d) Ferroelectric polarization (P−E) hysteresis loops for Si-doped BF30BT ceramics. S5 Fig. Data set for Fig. 5 (a, b) Butterfly bipolar strain-electric field (S−E) curves recorded under an applied electric field of 50 kV/cm, (c) maximum strain (Smax), and (d) d33, d33* of BF30BT ceramic as a function of Si3+ concentration. (e) Nd-doped BF30BT [23], BF40BT-BiM2/3Nb1/3O3 (BF40BT-BMN)[57], Sm-doped BF30BT (BSmF30BT) [24], Nb-doped BF33BT (BF33BTNb) [1], BF35BT [58], Zr-doped BF33BT (BF33BZrT) [14], BFBT-BiScO3 [28], Zr-doped BF36BT [30], LiNbO3-BF33BT (BF33BT-LN) [31], Ba-site Sm-doped BF33BT (BF33BSmT) [59], Bi-site BF33BT (BSmF33BT) [60], PZT and KNN-textured [8]. S6 Fig. Data set for Fig 6(a-c) Frequency characteristics of | Z | and θ of x =  0.005(BC), 0.01(BC), 0.01(AC), and (d) piezoelectric properties of Qm and Kp as a function of Si concentration for BF30BT ceramics. S7 Fig. Data set for Fig. 7 Fig. 7: (a-d) Temperature-dependent dielectric constant (εr) from room temperature to 600 °C, (e) tanδ from room temperature to 200 °C, and (f) room temperature tanδ for Si-doped BF30BT ceramics.
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