时间分辨光发射电子显微镜技术指标数据集

时间分辨光发射电子显微镜技术主要利用高时、空分辨能力研究半导体及其异质结中光生载流子的超快动力学，实现从空间、能量、时间和电子密度四个维度追踪光催化和光电转化过程中的电荷迁移过程。本数据集通过分别在自然氧化层Si和多层MoS2薄片上采集时间分辨的PEEM图像，对时间分辨率、空间分辨率这两个时间分辨光发射电子显微镜的关键技术指标进行了测量。主要记录了时间延迟和各时间延迟下的PEEM图像。
本数据主要是针对考核指标5.2“时间分辨角分辨光发射电子显微镜技术”，完成时的指标/状态：空间分辨率< 100 nm，时间分辨率< 200 fs。数据量11.8MB。

Time-resolved Photoemission Electron Microscopy (TR-PEEM) primarily leverages its high temporal and spatial resolution capabilities to investigate the ultrafast dynamics of photogenerated carriers in semiconductors and their heterostructures, enabling tracking of charge migration processes during photocatalysis and photoelectric conversion across four dimensions: spatial, energetic, temporal, and electron density. This dataset measures the two key technical metrics of TR-PEEM—temporal resolution and spatial resolution—by acquiring time-resolved PEEM images separately on naturally oxidized silicon (Si) substrates and multilayer MoS₂ flakes. It primarily records time delays and the corresponding PEEM images at each time delay. This dataset is mainly targeted at assessment indicator 5.2 "Time-resolved Angle-resolved Photoemission Electron Microscopy Technology", with the achieved performance status: spatial resolution < 100 nm, temporal resolution < 200 fs. The total data volume is 11.8 MB.

搜集汇总

背景与挑战

背景概述

该数据集聚焦于时间分辨光发射电子显微镜的技术指标测量，主要评估时间分辨率（<200 fs）和空间分辨率（<100 nm）两个关键参数。通过采集自然氧化层Si和多层MoS2薄片上的时间分辨PEEM图像，数据集提供了从空间、能量、时间和电子密度四个维度追踪光催化和光电转化过程中电荷迁移过程的数据支持。