Electrical measurements data of ultra-low current Metal-Oxide-Semiconductor-Oxide-Semiconductor devices
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https://repo.pw.edu.pl/info/researchdata/WUT6453f4c9c3b24094945ce4c15fc1d43f/
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<p><span lang="EN-US" style="font-size:10pt;font-family:'times new roman' , serif">We
present the electrical measurements data of ultra-low current Metal-Oxide-Semiconductor-Oxide-Semiconductor
structures. Various devices (Al/SiO<sub>x</sub>/a-Si/SiO<sub>x</sub>/n++ Si, </span>Al/SiO<sub>x</sub>/n++ Si, Al/a-Si/n++ Si<span lang="EN-US" style="font-size:10pt;font-family:'times new roman' , serif">) were electrically characterized using DC and transient measurements, including Discharging Current Transient
Spectroscopy (DCTS).</span> </p>
提供机构：
Warsaw University of Technology
创建时间：
2025-10-16
