Polarization Doping in a GaN-InN System—Ab Initio Simulation

Name: Polarization Doping in a GaN-InN System—Ab Initio Simulation
Creator: Institute of High Pressure Physics
Published: 2023-09-16T04:58:21+08:00

RepOD Repository for Open Data2023-09-16 更新2026-07-23 收录

极化掺杂

第一性原理模拟

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/UPSSAX 数据链接链接失效反馈

官方服务：

资源简介：

Strąk, Paweł, 2023, "Polarization Doping in a GaN-InN System—Ab Initio Simulation", https://doi.org/10.18150/UPSSAX, RepOD, V1

提供机构：

Institute of High Pressure Physics

创建时间：

2023-09-16

Polarization Doping in a GaN-InN System—Ab Initio Simulation

资源简介：

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