MWTL_Dataset_202410

This paper presents a mm-wave injection-locked oscillator (ILO) that integrates a pre-generator with a triple-pushed, three-stage ring oscillator (RO). The circuit is fabricated in 40-nm CMOS process without employing ultra-thick metal (UTM). Due to the triple-pushed technique, the proposed ILO achieves mm-wave operation without being constrained by process technology. A systematic design methodology is also introduced in this paper. The fabricated ILO operates from 228 GHz to 237 GHz, with the power consumption of 34.2-mW. Under injection locking, the phase noise (PN) reaches \u2212112.5 dBc\/Hz at 1-MHz offset and \u2212121.7 dBc\/Hz at 10-MHz offset, resulting in the figure-of-merit (FoM) of \u2212204.6 dBc\/Hz. These results demonstrate that the proposed ILO achieves excellent performance without using UTM in the fabrication process.