VCSEL Quick Fabrication for Assessment of Large Diameter Wafers - data

Stripped-back representative VCSEL devices with a simple fabrication process that very closely approaches the performance of standard BCB-planarised devices have been produced. These VCSEL Quick Fabrication (VQF) devices achieve threshold currents only 0.3 mA higher than that of a standard device produced from the same material. The predictability of standard performance from VQF performance is also robustly assessed in terms of temperature effects to account for the observed disparities. This dataset contains 10 sub-folders named "Figure X" with X corresponding to the figure number. In "Figure 3" are two sub-folders containing raw P-I-V data for both VQF and standard devices. From the columns labelled "Current" and "Voltage", the series resistance was extracted as the slope between 2.4 and 2.5 V. In "Figure 4" are two sub-folders containing raw P-I-V data for both VQF and standard devices. From the columns labelled "Current" and "Power", the threshold current was extracted as the current corresponding to the maximum of the second derivative of P(I). In "Figure 5" are two sub-folders corresponding to the top and bottom plots of Figure 5. In "Top" are three sub-folders containing raw P-I-V data for a range of temperatures, corresponding to 7 & 9 um aperture VQF devices and an 8um standard device. From these files the threshold current was extracted and plotted against the temperature. In "Bottom" are three sub-folders containing P-I-V data up to thermal rollover, corresponding to 7 & 9 um aperture VQF devices and an 8um standard device. In "Figure 6" are three sub-folders corresponding to 1 & 3um aperture VQF devices and a 2um aperture standard device. Within each these folders are lasing spectra data. In "Figure 7" are three sub-folders corresponding to 7 & 9um aperture VQF devices and an 8um aperture standard device. Within each these folders are lasing spectra data. In "Figure 8" are two sub-folders corresponding to standard and VQF devices. Within these folders are lasing spectra data from which the fundamental mode wavelength was extracted and plotted against oxide aperture. In "Figure 9" are two sub-folders corresponding to the top and bottom plots of figure 9. In "Top" is a raw data file from which the wafer map is plotted. Colums 1 & 2 are the X and Y coordinates in mm. Colum 8 is the material cavity resonance wavelength. In "Bottom" are two sub-folders containg material cavity resonance wavelength data (extracted as a line profile from the raw data found in "Top") and lasing wavelength data for a devices along the same line profile. The X coordinates (in mm) for the lasing wavelengths are labelled in the filename. In "Figure 10" are two sub-folders. In "oxidation" is a datafile containing measurements of oxidation length taken at various locations on the wafer. The coordinates (in mm) of where the measurements were performed is the X column of the data. In "Resistance" is raw P-I-V datafiles. From the columns labelled "Current" and "Voltage", the series resistance was extracted as the slope between 2.4 and 2.5 V. The resistance was plotted against the wafer X coordinate of the device, which is labelled in the filename. In "Figure 11" are two sub-folders corresponding to the top and bottom images of figure 11. In "Top" are sub-folders containing P-I-V data from which the threshold current was extracted and plotted against XY coordinates to create a heatmap. The XY coordinates are are labelled in the subfolder names. In "Bottom" is a data file of the threshold current density extracted from the data of "Top" for the X=7 subfolders. In "Figure 12" are subfolders corresponding to edge and centre devices. Withing the subfolders are raw P-I-V data files for a range of temperatures from which the threshold current density was extracted. The temperatures are labelled in the filename.