Research data supporting "Optical and structural properties of dislocations in InGaN"

The figures in this dataset are taken from the associated publication in the Journal of Applied Physics. Data to support figures 2–6 are provided. The following are captions for the figures in the Journal of Applied Physics. Figure 1 – (a) AFM, (b) SEM, and (c) room temperature panchromatic CL taken on the same area of sample B. Figure 2 – (a) AFM, continuous wave (CW) mode CL (b) integrated intensity and (c) peak wavelength, and pulsed mode CL (d) integrated intensity and (e) peak wavelength of the same region of sample D at 300 K (corresponding to the area highlighted in (a)). (f) Streak map taken in the surrounding material, and (g) extracted time decay curve at the spectral position indicated by a square in (g). (The black regions in (e) correspond to pixels where the CL signal was too low to extract accurate value of peak wavelength.) Figure 3 – Room temperature panchromatic CL image of samples (a) A, (b) B, (c) C, and (d) D. In inset of (d), panchromatic CL with brightness and contrast adjusted to reveal CL intensity variation at dislocations. Plots of the (e) intensity ratio and (f) energy shift on the center and on the facet of the V-pit as a function of indium content and dislocation type. Figure 4 – Molecular dynamics results of distribution and length of In-N-In chains in supercells of overall composition 5.5% (a) and 20% (b). (c) Probability of indium atom to be part of multiple atom chain. Figure 5 – Wavelength dependence of (a) decay time τdecay and (b) rise time τrise recorded at 15 K on the bright spot of an edge-type dislocation in samples B and D. In background, corresponding time integrated emission spectra (B in violet, and D in blue), and in dotted line, the time response of the system. Figure 6 – Wavelength dependence of the decay time τdecay recorded at 300 K on (a) the surrounding material and (b) bright spot of an edge-type dislocation in sample D, with corresponding time integrated emission spectra and streak map. For direct comparison, the surrounding emission spectrum (the same as in (a)) is added as the dotted line in (b). Figure 7 – ADF-STEM (a,e), dark field TEM images taken under g=11 ̅00 (b,f) and g=0002 (c,g) condition, and EDX mapping of In fraction (d,h) of a V-pit in sample B (a-d) and sample D (e-h).