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Data associated with "Characterizing the broadband RF permittivity of 3D-integrated layers in a glass wafer stack from 100 MHz to 30 GHz" for the 2024 International Microwave Symposium (IMS) in Washington, D.C.

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NIST Chemistry WebBook2024-08-16 更新2026-03-14 收录
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https://data.nist.gov/od/id/mds2-3111
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We present a method for accurately determining the permittivity of dielectric materials in 3D integrated structures at broadband RF frequencies. With applications of microwave and millimeter-wave electronics on the rise, reliable methods for measuring the electrical properties of dielectrics used in integrated circuits are critical. We outline an on-wafer method for extracting the permittivity of a 3D multilayer glass structure from 100 MHz to 30 GHz using S-parameter measurements of different calibration chips. Our method can be used to inform better design of metrology for dielectric materials for 3D integrated circuit technologies.
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