Integration of InP membranes with embedded InGaAs quantum wells on silicon-on-insulator by tunnel epitaxy _ Dataset

This dataset supports the manuscript titled “Integration of InP membranes with embedded InGaAs quantum wells on silicon-on-insulator by tunnel epitaxy.”The study uses scanning transmission electron microscopy (STEM), energy-dispersive X-ray spectroscopy (EDX) composition measurements, and lattice-spacing/strain mapping to investigate the structure and strain state of vertically oriented (110) InGaAs quantum wells (QWs) laterally grown on silicon-on-insulator substrates.The lamella samples were prepared using focused ion beam (FIB) milling, and STEM measurements were performed along the [110] zone axis. EDX area measurements were carried out on nanoscale (110) and (111)A InGaAs QWs, and EDX line profiles were acquired across multiple QWs, as well as bulk InGaAs layers. Based on a high-resolution STEM image, horizontal and vertical atomic lattice spacings were extracted to analyse the anisotropic strain state within the InGaAs QWs.The dataset includes:EDX area measurements of indium composition in (110) and (111)A InGaAs QWsEDX line profiles acquired across multiple quantum wells and bulk InGaAs layersExtracted horizontal atomic lattice spacing data from high-resolution STEM images (for lattice/strain analysis)