Single electron capture in low- and intermediate-energy collisions of Si3,4+ with He

The single electron capture processes in Si3,4++He collisions have been investigated theoretically employing the two-center atomic orbital close-coupling method in the energy range 0.01-100 keV/u. Total and state-selective electron capture cross sections for the dominant and subdominant reaction channels are calculated and compared with the available experimental and theoretical data. For the total charge transfer cross sections, the present results show better agreements with the available experimental data than the other theoretical ones in the overlapping energy region for both collision systems. For the state-selective cross sections, the present results for 3s and 3p states are in general agreement with the previous MOCC results in the low energy region for both collision systems. Furthermore, the cross sections for electron captured to the 3d, 4l and 5l (l=0,1,…,n-1) states of Si2+ and Si3+ ions are first provided in a broad energy region in our work. These results are useful for the investigations in astrophysics.