Supporting data for "Coupling between gate-electrode plasmon and gate-dielectric phonon on the carrier mobility of InGaZnO thin-film transistor"

This dataset is the supporting data for the thesis entitled Coupling between gate-electrode plasmon and gate-dielectric phonon on the carrier mobility of InGaZnO thin-film transistor. It includes transfer characteristics and output characteristics of IGZO TFTs, capacitance-voltage characteristics of MOS capacitors, as well as FTIR and XPS information for La-based and Nd-based thin films. All data is in either .txt format or .pdf format so that is easily readable.

本数据集为论文《门电极等离子体与门介电质声子之间的耦合对InGaZnO薄膜晶体管载流子迁移率的影响》的辅助数据。其中包含IGZO薄膜晶体管的传输特性和输出特性、MOS电容的电容-电压特性，以及基于La和基于Nd的薄膜的傅里叶变换红外光谱（FTIR）和X射线光电子能谱（XPS）信息。所有数据均以.txt格式或.pdf格式提供，以便于阅读。