The study of sing event function interrupt on MRAM

In order to study the propagation process of single event up (SEU) in magnetic memory leading to single event function interruption, a commercial magnetic memory (MRAM) was experimented with by taking advantage of the localization of pulsed lasers. The experiment shows that when the laser energy reaches 600pJ (equivalent LET value is 25Mev.cm^2/mg), the cyclic reading function of the circuit fails and the function is interrupted, and the sensitive area where the single-particle function interruption occurs is located at the bottom of the device in a peripheral read circuit consisting of several sensitive amplifiers. Based on the current gain G in the sensitive region when read failure occurs, this phenomenon is not mSEL. At the same time, according to the feedback factor <1, it is determined that the reading circuit when high-energy particles irradiate the device is due to the positive feedback effect and the function is interrupted.