制备高质量的GaAs-Ge及InAs-GaSb低维极性异质结构和p-n范德瓦尔斯极性异质结构

范德瓦尔斯异质结是二维材料以特定顺序堆叠所形成的人工材料, 其具有优异的光电磁特性。通过制备高质量的低维极性异质结结构能够探究层与层之间、单层与多层间相互作用的影响。通过将传统半导体GaAs或者InAs与二维铁磁相堆叠可以形成新颖的具有特定手性极化效果、对光电磁相应更加强的新型极性异质结样品，为探索丰富多彩的物理效应和新奇的物理现象,以及构建新型的自旋电子学器件提供了灵活而广阔的平台。共振隧穿二极管（RTD）是利用量子共振隧穿效应而制成的一种高速纳米电子器件。共振隧穿器件由于具有高频、高速、低功耗、负阻、双稳、自锁及用少量器件完成多种逻辑功能等特点，因而在未来电子信息技术领域中具有很大的发展潜力。中短波双色极性InAs/GaSb二类超晶格异质结光电晶体管(HPT)有可能应用复杂的目标探测等方面。基于以上研究背景的实际需求，我们设计了相应的实验方案。利用中国科学院半导体研究所现有的实验设备高分辨x射线衍射仪（英国Bede公司型号：Bede D1），源表（美国KEITHLEY 型号2400），傅里叶红外光谱仪（德国 布鲁克 型号：V70），前置放大器（美国stanford 型号：SR570），黑体（中国 上海福源光电技术有限公司，型号： HFY-200B），频谱分析仪（美国stanford 型号：SR770）实验观测数据。数据量预计10MB /10条。

Van der Waals heterojunctions are artificial materials fabricated by stacking two-dimensional (2D) materials in a specific order, possessing excellent optoelectronic properties. Preparing high-quality low-dimensional polar heterojunction structures allows for the investigation of the effects of interlayer interactions, as well as those between monolayer and multilayer structures. Stacking traditional semiconductors GaAs or InAs with 2D ferromagnetic phases can yield novel polar heterojunction samples with specific chiral polarization effects and enhanced optoelectronic responses, providing a flexible and broad platform for exploring diverse physical effects and novel phenomena, as well as constructing next-generation spintronic devices.

Resonant tunneling diodes (RTDs) are high-speed nanoelectronic devices developed based on the quantum resonant tunneling effect. Due to their characteristics including high frequency, high speed, low power consumption, negative differential resistance, bistability, self-locking, and the capability to realize multiple logic functions with a small number of devices, resonant tunneling devices hold great development potential in the future electronic information technology field.

The mid-wave and short-wave dual-color polar InAs/GaSb type-II superlattice heterojunction phototransistor (HPT) has potential applications in complex target detection and other related scenarios.

Based on the actual research requirements derived from the above background, we designed the corresponding experimental protocol. The experimental observation data were collected using the existing experimental facilities at the Institute of Semiconductors, Chinese Academy of Sciences, including: high-resolution X-ray diffractometer (model Bede D1, Bede Company, UK), source meter (model 2400, KEITHLEY, USA), Fourier transform infrared (FTIR) spectrometer (model V70, Bruker, Germany), preamplifier (model SR570, Stanford, USA), blackbody radiator (model HFY-200B, Shanghai Fuyuan Optoelectronic Technology Co., Ltd., China), and spectrum analyzer (model SR770, Stanford, USA). The estimated data volume is 10 MB for 10 samples.

搜集汇总

背景与挑战

背景概述

该数据集聚焦于制备和研究高质量的低维极性异质结构，特别是GaAs-Ge及InAs-GaSb异质结和p-n范德瓦尔斯极性异质结构，旨在探索其光电磁特性和潜在的自旋电子学应用。数据集包含实验观测数据，数据量为22.63MB，共71个文件，由中国科学院半导体研究所创建。