Mapping of strain fields in doped Diamond undulators
收藏DataCite Commons2025-03-27 更新2025-04-15 收录
下载链接：
https://doi.esrf.fr/10.15151/ESRF-ES-2113731674
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资源简介：
We employ SXDM at ID01 to map local changes in the lattice parameter within homoepitaxial Diamond thin films for applications as undulators due to changes in the doping level
提供机构：
European Synchrotron Radiation Facility
创建时间：
2025-03-27
