Research data supporting "Dislocations in AlGaN: core structure, atom segregation and optical properties"

Figure 1. Plan-view aberration-corrected HAADF-STEM image of the AlGaN sample, showing the core structure of an edge-type dislocation (5/7-atom ring)(a,d,g), an undissociated mixed-type dislocation (double 5/6-atom ring)(b,e,h) and a dissociated mixed-type dislocation (7/4/8/4/9-atom ring)(c,f,i). Raw unfiltered images (a-c), and ABSF-filtered (average background subtraction filter) (d-f) with atomic columns identified to guide the eye (g-i).

Figure 2. (a) Unfiltered HAADF-STEM image of an undissociated mixed-type dislocation. (b) ABSF-filtered image of (a) with geometric phase analysis overlay showing the x-x strain component (x-axis parallel to [11-20]). (c) EDX line scan showing the composition of Al, Ga, and N along the line depicted in (b) (with a ca. 1 nm analysis width).

Figure 3. (a) AFM, (b) CL integrated intensity, and (c) CL peak emission energy of the same region in the AlGaN sample.

Figure 4. (a) AFM, (b) CL integrated intensity, and (c) CL peak emission energy of the same region in the InGaN sample.

Figure 5. Simulation of the emission energy shift in the vicinity of an edge-type dislocation.

图1. 图1展示了AlGaN样品的平面视图校正像差的高角环形暗场扫描电子显微镜（HAADF-STEM）图像，其中揭示了边缘型位错（5/7原子环）（a,d,g）、未解离的混合型位错（双5/6原子环）（b,e,h）以及解离的混合型位错（7/4/8/4/9原子环）（c,f,i）的核心结构。图中的原始未滤波图像（a-c）以及经过平均背景减法滤波（ABSF）的滤波图像（d-f）均标明了原子列以引导观察者视线（g-i）。

图2. （a）未滤波的HAADF-STEM图像显示未解离的混合型位错。（b）对（a）的ABSF滤波图像，其上叠加了几何相位分析，展示了x-x应变分量（x轴平行于[11-20]方向）。（c）电子能谱线扫描显示了沿着（b）中描绘的线的Al、Ga和N的成分（分析宽度约为1纳米）。

图3. （a）原子力显微镜（AFM），（b）CL集成强度，以及（c）CL峰值发射能量，均为AlGaN样品中同一区域的图像。

图4. （a）AFM，（b）CL集成强度，以及（c）CL峰值发射能量，均为InGaN样品中同一区域的图像。

图5. 边缘型位错附近发射能量位移的模拟。