Data underlying the publication: A high-mobility hole bilayer in a germanium double quantum well

The repository contains one dataset of experimental data (resistance as a function of gate voltage and magnetic field) for a tunnel coupled bilayer in Ge/SiGe heterostructure. The repository also contains one dataset with Schrodinger-Poisson simulations of the measured device. All data analysis and plots presented in the paper are included in 3 Jupyter notebooks.

本数据仓库包含针对Ge/SiGe异质结构中隧道耦合双层结构的实验数据集（电阻随栅极电压与磁场的变化关系）。本数据仓库同时收录被测器件的薛定谔-泊松（Schrödinger-Poisson）模拟数据集。论文中呈现的全部数据分析与配图均包含于3个Jupyter笔记本（Jupyter Notebook）文件中。