首页/数据集/Data for: Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn Solution

Data for: Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn Solution

NIAID Data Ecosystem2026-03-11 收录

半导体外延

材料表征

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https://data.mendeley.com/datasets/dxhvtnczfz 数据链接链接失效反馈

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Raman scattering analysis results obtained from several SiGe-on-Si samples.

应用场景：

创建时间：

2020-04-27

材料表征

外延层模型验证

Measured compositions of layers and comparison with models (Fig. 4 data); measured strains of layers and comparison with models (Fig. 6 data); measured gallium profiles near interfaces with buffer lay

DataCite Commons2020-09-18 更新60

Materials Experiment and Analysis Database: Inkjet chemical deposition measurements 0 files performed on plate containing Y,Ce,Mg,Fe,Cu,In annealed at 550.0C to add O on 2018-02-07 from Run 20180207.162100

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喷墨沉积

This record is a component of the Materials Experiment and Analysis Database (MEAD). It contains raw data and metadata from millions of materials synthesis and characterization experiments, as well a

DataCite Commons2023-02-18 更新40

2023-06-SGFTFN_AMPHIBOLES.csv

角闪石成分

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:unav

DataCite Commons2024-12-12 更新20

X-ray Nanotomography and In-situ X-Ray Radiography: Wetting and Drying in Hie...

材料表征

多孔材料动态过程

We propose in-situ time- dependent X-ray radiography and nanotomography experiments on hierarchically porous silicon and silica membranes. The tomography should reveal the...

B2FIND50

1,Scanning Electron Microscope Diagram 2,Transmission Electron Microscope Diagram 3,ultraviolet absorption spectrum 4,Fluorescence spectral data 5,Fourier transform infrared spectroscopy

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催化剂性能

Solid-state UV-visible diffuse reflectance spectroscopy (UV-vis DRS) measures the light absorption performance and bandgap width of catalysts. In this study, the TU-1901 instrument model was utilized

科学数据银行2024-06-28 更新20

Data for: Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn Solution

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