磁性多层膜自旋扭矩数据集

本项目采用磁控溅射制备Ta/W/CoFeB/MgO/Ta复合磁性薄膜，利用紫外光刻、氩离子刻蚀制备微米尺寸的霍尔巴，通过电学、磁光科尔光镜等表征和测量手段，证实了超薄 W 层基于界面修饰可以有效地调控磁性多层膜的垂直磁各向异性（PMA）和自旋轨道矩（SOT）性能，这为自旋轨道距器件（SOT-MRAM）的实用化提供了可能性。This work fabricates Ta/W/CoFeB/MgO/Ta composite magnetic thin films via magnetron sputtering, then prepares micrometer-scale Hall bars using ultraviolet photolithography and argon ion etching. Through electrical characterization, magneto-optical Kerr microscopy and other characterization techniques, it is confirmed that the ultra-thin W layer can effectively tune the perpendicular magnetic anisotropy (PMA) and spin-orbit torque (SOT) properties of magnetic multilayers via interface modification, which offers a viable path toward the practical application of spin-orbit torque magnetic random-access memory (SOT-MRAM) devices.

搜集汇总

背景与挑战

背景概述

该数据集基于磁控溅射制备的Ta/W/CoFeB/MgO/Ta复合磁性薄膜，通过微纳加工和表征手段，证实超薄W层能有效调控垂直磁各向异性和自旋轨道矩性能。这为自旋轨道距器件的实用化发展提供了实验依据。