X-Ray Beam Induced Current combined with Scanning X-Ray Diffraction Microscopy on a GaN/Si heterostructure for High Power Applications

We will improve the setup for X-ray Beam Induced Current (XBIC) to obtain data with fine spatial resolution (< 50 nm) at ID01, to allow for direct correlation of XBIC data with Scanning X-Ray Diffraction Microscopy (SXDM). Our case study will be performed on a state-of-the-art epitaxial GaN(0001)/Si(111) heterostructure for high power applications, which will be electrically contacted on a chip card and connected to a Voltamperemeter, the signal of which will be read out with a voltage-to-frequency converter to match the high framerates up to 100 Hz typical for SXDM. We will optimize the electrical parameters to obtain high-quality XBIC data to observe electrically active defects.