Thermal Isotropic ALE Mechanisms of SiO₂
收藏DataCite Commons2025-11-09 更新2026-05-04 收录
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https://orkg.org/comparison/R1561046
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资源简介：
Details thermally driven isotropic ALE processes involving sequential reactions without plasma assistance.
Each entry lists the multistep etching mechanism (conversion → fluorination → ligand exchange or sublimation), the reactants used in each step, etching rates, and sources.
Shows how TMA/HF and HF/NH₃ systems achieve controlled layer-by-layer SiO₂ removal.
提供机构：
Open Research Knowledge Graph
创建时间：
2025-11-09
