Thermal Isotropic ALE Mechanisms of SiO₂
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Details thermally driven isotropic ALE processes involving sequential reactions without plasma assistance. Each entry lists the multistep etching mechanism (conversion → fluorination → ligand exchange or sublimation), the reactants used in each step, etching rates, and sources. Shows how TMA/HF and HF/NH₃ systems achieve controlled layer-by-layer SiO₂ removal.
创建时间：
2025-11-09
