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Research Data supporting "Understanding Volatile Electrical Switching of hBN Nanodevices by Fully Optical Operando Investigation"

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DataCite Commons2025-05-31 更新2025-06-14 收录
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https://www.repository.cam.ac.uk/handle/1810/375335
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This research data originated from a study of the electrical and optical characteristics of vertical two-terminal devices based on an hBN monolayer. .txt files are named according to the Figure to which they below and to axis of the plot the data is assigned. (eg FIg_1a_x_axis... ) Files labelled as Fig_1a contain current-voltage data collected during electrical switching of the hBN device. Files labelled as Fig_2a contain simultaneous electrical and photoluminescence (PL) data collected during electrical switching of the hBN device. Files labelled as Fig_2b hold data describing variation of the PL intensity at 530nm, as well as the magnitude of the applied voltage. Files labelled Fig_2c contain average PL spectra for low and high resistance states of the hBN device. Files labelled as Fig_3a contain simultaneous electrical and dark-field scattering (DF) data collected during electrical switching of the hBN device. Files labelled Fig_3b contain average DF spectra for low and high resistance states of the hBN device. Files labelled as Fig_3c hold data describing variation of the mean DF peak location in nm, as well as the magnitude of the current in nA. Files labelled as Fig_3c hold data describing variation of the mean DF peak location in nm, as well as the applied voltage required to switch the device in V. Files labelled as Fig_4a contain experimental DF scattering data for low and high resistance states of the hBN device. Files labelled as Fig_4b contain simulated scattering spectra for models of the device with varying refractive indices.
提供机构:
Apollo - University of Cambridge Repository
创建时间:
2024-10-24
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