Uncertainty Added S-Parameters of High Power RF Transistors
收藏IEEE2020-07-20 更新2026-04-17 收录
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https://ieee-dataport.org/open-access/uncertainty-added-s-parameters-high-power-rf-transistors
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资源简介：
S-parameter data with uncertainty information are presented in the data set. High power RF transistors are measured with a regular measurement setup, consisting of a VNA, coaxial cables, bias tees, and fixture. Measured transistors are FLL57MK (GaAs-FET), LP601 (LDMOS-FET), CLF1G0060S-10 (GaN-HEMT), T2G6000528-Q3 (GaN-HEMT), CGH40010-F (GaN-HEMT). The data can be used to analyze for uncertainty studies and designing with uncertainty added S-parameters.
提供机构：
Esposito, Giampiero; Buber, Tekamul; Ceylan, Osman
创建时间：
2020-07-20
