<b>13μm cutoff InAs/GaSb Type-II superlattice nBn detectors with a high quantum efficiency grown by MOCVD</b>

In this work we report the growth and fabrication optimisation of a long wavelength InAs/GaSb Type-II superlattice (T2SL) nBn detector grown by metal-organic chemical vapor deposition (MOCVD). A GaAs like interfacial scheme was employed to grow the T2SLs lattice matched to InAs substrates. A larger bandgap InAs/GaSb T2SL was used as an electron barrier removing the need for AlSb based materials within this detector.This repository contains the X-ray diffraction data, electrical characterisation data and the optical characterisation data of the InAs/GaSb T2SL nBn detectorsThe X-ray diffraction data was used to quantify the epitaxial layer thickness, interfacial layer composition and lattice match of the InAs/GaSb T2SLs and consists of the diffraction intensity against incident X-ray angle.The electrical characterisation data was used to quantify the dark current performance of the detectors. The electrical characterisation data consists of dark current against voltage of the detectors. The electrical characterisation data also includes how the dark current density changes with device diameter.The optical characterisation data consists of the responsivity, quantum efficiency and detectivity against wavelength for the detectors.<br>

本工作报道了采用金属有机化学气相沉积（metal-organic chemical vapor deposition, MOCVD）生长的长波InAs/GaSb II型超晶格（Type-II superlattice, T2SL）nBn探测器的生长与制备优化工艺。研究采用类GaAs界面方案，实现了与InAs衬底晶格匹配的T2SL生长。本探测器采用禁带宽度更大的InAs/GaSb T2SL作为电子势垒，无需使用基于AlSb的材料。本数据集仓库包含InAs/GaSb T2SL nBn探测器的X射线衍射（X-ray diffraction）数据、电学表征（electrical characterisation）数据与光学表征数据。其中，X射线衍射数据用于量化表征InAs/GaSb T2SL的外延层厚度、界面层组分与晶格匹配度，该数据集包含衍射强度随入射X射线角度的变化关系。电学表征数据用于量化探测器的暗电流性能，包含探测器暗电流随电压的变化关系，同时涵盖暗电流密度随器件直径的变化规律。光学表征数据包含探测器的响应度、量子效率与探测率随波长的变化关系。