Impact of orientation misalignments on black phosphorus ultrascaled field-effect transistors
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资源简介：
Advanced quantum transport approach from first-principle to shed light on the influence of orientation misalignments on the performance of BP-based field-effect transistors, for which the input files are reported. Both n-and p-type configurations are investigated for six alignment angles, in the ballistic limit of transport and in the presence of electron-phonon and charged impurity scattering.
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Materials Cloud创建时间：
2021-10-29
