Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
收藏Mendeley Data2024-03-27 更新2024-06-26 收录
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Conduction and valence band profiles calculated using Nextnano3 for InGaN/GaN single quantum well structures with Si-doped InGaN underlayers and different GaN cap layer thicknesses. Photoluminescence spectra obtained at 10 K for those quantum well structures.
创建时间：
2024-01-23
