Dataset for the article "Forming and Compliance-free Operation of Low-energy, Fast-switching HfO_xS_y/HfS₂ Memristors"

Dataset for the manuscript "Forming and Compliance-free Operation of Low-energy, Fast-switching HfO_xS_y/HfS₂ Memristors" by Aferdita Xhameni et al. The dataset is split in two folders containing the data shown in the main manuscript and in the supplementary information respectively. Within each folder, data are organized in sub-folders corresponding to the figures in the article. The dataset includes: All the raw electrical data (pulsed switching, switching cycles, retention, etc.) of the experimental resistive memories shown in the paper. The data have been acquired via a Keysight B1500 parameter analyzer equipped with remote sensing units (waveform generator/ fast measurement unit) and a Keysight P9243a oscilloscope.Simulated current-voltage (I-V) characteristics of HfO_x and HfO_x/HfS₂ memristors generated by using Synopsys Sentaurus TCAD. <br>本数据集对应Aferdita Xhameni等人撰写的学术论文《低能耗快速开关HfOₓSᵧ/HfS₂忆阻器的形成与无合规操作》。本数据集分为两个文件夹，分别存储正文章节及补充材料中的相关数据。每个文件夹内的数据均按照论文对应插图的编号，以子文件夹形式分类存储。数据集包含论文中提及的所有实验型阻变存储器（resistive memories）的原始电学数据，涵盖脉冲开关、开关循环、保持特性等测试内容。上述数据通过配置远程传感单元（波形发生器/快速测量模块）的Keysight B1500参数分析仪，以及Keysight P9243a示波器采集得到。此外还包含采用Synopsys Sentaurus TCAD仿真得到的HfOₓ及HfOₓ/HfS₂忆阻器的仿真电流-电压（I-V）特性数据。

搜集汇总

背景与挑战

背景概述

该数据集为文章“Forming and Compliance-free Operation of Low-energy, Fast-switching HfOxSy/HfS2 Memristors”提供支持，包含实验性电阻存储器的原始电学数据（如开关循环和保持性）以及基于TCAD模拟的电流-电压特性，数据按文章图例组织，覆盖纳米电子学和纳米材料领域，适用于忆阻器性能分析。