Chemical Capacitance Measurements and Simulated Defect Data for Gadolinium-Doped Ceria at 750 °C

This data set contains measurement data recorded on gadolinium-doped ceria (GDC10) thin film electrodes at 750 °C via electrochemical impedance spectroscopy as well as simulated defect concentrations at highly reducing conditions. EIS measurements were carried out under the application of bias voltages leading to a controlled chemical potential of oxygen in the thin film (i.e. equivalent oxygen partial pressure). The calculated chemical capacitance was used as a guide for defect chemical modeling over a broad range of oxygen partial pressures. The data is intended for the paper "How Are Excess Electrons Stored in Ceria? Chemical Capacitance at Extremely Reducing Conditions" which is currently in submission.