SNSPDs narrowed by atomic layer etching
收藏DataCite Commons2025-03-10 更新2025-04-16 收录
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http://dataverse.jpl.nasa.gov/citation?persistentId=doi:10.48577/jpl.O08MNR
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资源简介：
Superconducting nanowire single photon detectors (SNSPDs) have shown remark-able photon detection characteristics, and novel scalability architectures allow for thefabrication of SNSPD cameras with over a hundred thousand pixels. Producing suchlarge format devices requires the use of a high throughput lithography process suchas stepper photolithography. This restricts nanowire widths to the resolution limit ofthe photolithography system which limits performance. In this paper, we develop anovel SNSPD fabrication process that uses bi-directional atomic layer etching to re-duce nanowire widths by >100 nm, achieving performance that has only previouslybeen attained using low throughput electron beam lithography. This novel fabricationprocess will allow for high pixel count SNSPD cameras with improved performance dueto reduced nanowire widths.
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Root
创建时间：
2025-03-10
