Data for paper: Avalanche breakdown characteristics of Al1-xGaxAsSb quaternary alloys

The
files correspond to experimental results in paper: “Avalanche breakdown
characteristics of Al1-xGaxAsSb quaternary alloys” DOI: 10.1109/LPT.2016.2601651.

There
are two types of files:

-.PNG,
which corresponds to the figures

-.CSV,
which are raw data in figures

The work in this paper mainly focus on the experiments
to accurately determine avalanche breakdown characteristics of
Al1-xGaxAs0.56Sb0.44 for x = 0 to 0.15. The test structures
were p-i-n diodes with 100 nm avalanche layers to maximize usefulness of the
results for high bandwidth APDs. In addition, due to a lack of experimental
reports, this work included experimental confirmation of minimum bandgaps, Eg, of Al1-xGaxAs0.56Sb0.44.

The data consists of results from Al1-xGaxAs0.56Sb0.44
avalanche photodiodes (x = 0 to 0.15):
photoresponse, dark current, capacitance, bandgap, avalanche gain and breakdown
voltage. More details about these data/figures can be found in README file.

本数据集包含的文件对应于论文《Al1-xGaxAsSb 四元合金的雪崩击穿特性》中的实验结果，该论文的DOI为：10.1109/LPT.2016.2601651。数据集包含两种类型的文件：一是PNG格式，对应于论文中的图表；二是CSV格式，包含图表中的原始数据。该论文的研究主要集中于对Al1-xGaxAs0.56Sb0.44（其中x的取值范围从0到0.15）的雪崩击穿特性进行精确测定。实验采用的测试结构为具有100 nm雪崩层的p-i-n二极管，以最大限度地提高结果在高带宽APD中的应用价值。此外，鉴于缺乏相关实验报告，本研究还包含了Al1-xGaxAs0.56Sb0.44的最小能带隙Eg的实验验证。数据集包含Al1-xGaxAs0.56Sb0.44雪崩光电二极管（x = 0至0.15）的以下结果：光响应、暗电流、电容、能带隙、雪崩增益和击穿电压。关于这些数据/图表的更多详细信息，请参阅README文件。