Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

Data corresponds to the demonstration of the first memtransistor on monolayer MoS2. Polycrystalline monolayer MoS2 was grown by chemical vapor deposition with grain sizes of 3-5 microns. Memtransistor devices were fabricated on Si substrates coated with 300 nm thermal oxide by following custom-made photolithography and reactive ion etching recipes. Characterization of the devices using atomic force microscopy, electrostatic force microscopy, and cryogenic measurement revealed switching mechanism governed by a dynamically tunable Schottky barrier at contact. Schottky barrier tuning, as modeled by a device physics model, arises from the migration of defects near metal edge possibly assisted by grain boundaries. The devices show large resistive switching ratios, large gate-tunability of resistive switching ratio, retention of distinct states for at least 24 hours, the endurance of >400 cycles, and some device to device variability. The device is compatible with multi-terminal architecture thus mimicking biological neurons.