Synchrotron XRD data on plastic strain-induced phase transformations in Si

Silicon is an important electronic material, and this study reveals its various plastic strain-induced piezoelectric phenomena. The study uses synchrotron X-ray diffraction (XRD) in axial geometry to investigate the plastic strain-induced phase transformation phenomena in silicon (Si) with different particle sizes. Plastic compression experiments were conducted inside a diamond anvil cell (DAC) for micron-sized, 100 nm, and 30 nm Si. The XRD patterns were collected along the culet diameter with a step size of 8 μm for the micron sample and 10 μm for the 100 nm and 30 nm samples. The dataset is organized into six major folders which contain .tif, .jpg, .txt, .xy, .chi, .log, .poni, .npz, and .mask files.AcknowledgementsResearch support from NSF, ARO, and Iowa State University (Vance Coffman Faculty Chair Professorship and Murray Harpole Chair in Engineering) is greatly appreciated. This work was performed at HPCAT (Sector 16), Advanced Photon Source (APS), and Argonne National Laboratory. HPCAT operations are supported by DOE-NNSA’s Office of Experimental Science. The Advanced Photon Source is a U.S. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357. We also acknowledge CDAC-UIC for helping with the laser drilling of gaskets.