Research data supporting "Controlled Oxygen Vacancy Electrode Reservoir for Robust WO3-based Memory Devices"

This dataset contains the raw and processed data used to evaluate resistive switching, synaptic behaviour, electronic structure, optical response, and microstructure in the thin-film memory devices. The dataset is organized by figure number, containing the raw experimental measurement data used to generate the corresponding main-text or supplementary plots. The file names generally encode the sample stack, device identifier, measurement type, and, where relevant, voltage or pulse conditions. Details of folder contents are as follows: Fig1b: contains consecutive current–voltage (I–V) switching cycles. Fig1c: contains I–V data collected from multiple devices with different top-electrode diameters. Each subfolder corresponds to an individual device location and contains repeated I–V scans. Fig1d: contains processed data used for the forming-voltage summary as a function of ITO oxygen deposition condition. Fig1e: contains pulsed endurance measurement files. Fig1f: contains processed endurance statistics as a function of ITO oxygen deposition condition. Fig1g: contains the sources of the comparison used in the performance map. Fig2a: contains conductance data measured under repeated identical programming pulses. These files record conductance evolution during analog switching. Fig2b: contains multilevel retention data. Fig2c: contains conductance data obtained under pulse trains with gradually increasing amplitude. Fig2d: contains the sources of the comparison used in the performance map. Fig2e: contains paired-pulse facilitation and paired-pulse depression data. Fig2f: contains spike-timing-dependent plasticity data. Fig3b, Fig3c: contains Kelvin probe force microscopy data and related processed outputs used to evaluate surface potential changes. Fig3d: contains ultraviolet photoelectron spectroscopy data. Fig3e: contains four-point probe resistivity data. Fig3f: contains operando Raman spectroscopy data collected after increasing numbers of switching cycles. These spectra track changes in WO(_3) vibrational modes during repeated electrical stressing and provide evidence of defect-related structural evolution. Fig3g: contains operando photoluminescence data collected after increasing numbers of switching cycles. These files capture defect-related optical emission changes associated with oxygen-vacancy evolution during device operation. Fig4a: contains cross-sectional transmission electron microscopy images of the optimized device stack. Fig4b-c: contains transmission electron microscopy elemental maps and related compositional imaging files. Fig4d: contains Rutherford backscattering spectrometry data and processed composition profiles. Fig4e: contains X-ray photoelectron spectroscopy data. Fig4f: contains Raman spectroscopy data. Fig4g: contains photoluminescence data. SI: contains supplementary datasets corresponding to additional electrical, structural, spectroscopic, and surface-characterization results. These include extra retention and switching data, fitting results of spectroscopy data, extended transmission electron microscopy datasets, etc. The supplementary folder structure follows the same figure-based organization as the main dataset. File formats: .csv files: mainly contain raw or processed numerical data from electrical measurements, resistivity measurements, and spectroscopy measurement data. .xrdml files: raw X-ray diffraction data exported from the diffractometer. .tif files: raw electron microscopy images and elemental map. .spm files: raw atomic force microscopy-derived files. These files can be opened in Bruker NanoScope Analysis software. .txt files: readme or supporting text files describing figure content, fitting information, or data organization.