Silicon integrated mechanical sensors for operation at temperatures (0 / 300)℃

nical sensors for automatic control systems, addressing limitations in traditional designs that restrict performance to below 100–200°C. The works focus on overcoming challenges such as thermal degradation of insulating p-n junctions, mechanical stresses from lattice mismatches, and poor reproducibility of elastic elements, while enhancing metrological characteristics for high-precision applications in aerospace and industrial environments. Key approaches include optimizing p-n junction isolation through experimental analysis of leakage currents and reverse current densities, exploring dielectric isolation via silicon-on-sapphire (SOS) and silicon-on-insulator (SOI) technologies, and developing distributed-parameter bridge circuits without p-n junctions. Doping strategies increase majority carrier concentration in elastic elements (average resistivity ρ_ee ≈ 0.5–10 Ω·cm), ensuring 2–10 times higher conductivity in piezoresistive channels. Modeling employs differential equations solved with Bessel functions to derive strain-sensitivity coefficients K(T, ε_y) and input resistance R_in(T), with symmetric topologies minimizing temperature gradients and null output instability (γ_mc0 ≤ 0.03%/°C). Experimental validation on beam and membrane transducers demonstrates extended ranges (e.g., -60 to 325°C), intrinsic errors ≤1%, and complementary temperature errors <0.05%/°C. Results enable miniaturized sensors (e.g., ∅13×11 mm, <10 g) with unified designs via elastic element thickness adjustments, offering reliable, cost-effective solutions for harsh conditions while complementing SOS/SOI advancements for temperatures beyond silicon’s intrinsic conductivity limits.