Data for: Influence on Curvature Induced Stress to the Flatband Voltage and Interface Density of 4H-SiC MOS Structure

The data details including the followings.
Figure 1. C-V characteristics of n-type 4H-SiC (0001) MOS capacitor.
Figure 2. The relationship between curvature and Vfb.
Figure 3. Interface defect state density (Dit) as a function of energy level below the conduction band of SiC, estimated by the C-ψs method, measured at room .
Figure 4. The relationship between curvature and Dit @Ec-E=0.2eV.
Figure 5. Infrared spectra of thermally grown SiO2.
Figure 6. Change of LO wavenumbers with curvature.