FinFET原子层通道数据集

本项目设计了高200-300 nm的硅晶体台阶模板，采用湿法喷涂化学气相沉积（CVD）技术，实现了在模板台阶侧壁上共形生长过渡族金属硫化物单原子层晶体（单层MoS2、WS2等）。通过采用多重刻蚀等微纳加工工艺，制备出具有单层极限的二维半导体材料沟道的鳍式场效应晶体管。通过探针台表征其电学特性，并使用COMSOL模拟该器件理想状态下的电学特性。

This project designed a silicon crystal step template with a height of 200–300 nm. Wet-spray chemical vapor deposition (CVD) was utilized to achieve conformal growth of transition metal dichalcogenide monolayer crystals (such as monolayer MoS₂, WS₂) on the sidewalls of the template steps. Via micro-nano fabrication processes including multiple etching, fin field-effect transistors (FinFETs) with channels made of two-dimensional (2D) semiconductor materials at the monolayer thickness limit were fabricated. The electrical properties of the fabricated devices were characterized using a probe station, and their ideal-state electrical characteristics were simulated via COMSOL.

搜集汇总

背景与挑战

背景概述

该数据集聚焦于FinFET（鳍式场效应晶体管）的原子层通道技术，通过湿法喷涂化学气相沉积在硅台阶模板上生长单层二维半导体材料（如MoS2、WS2），并制备出极限沟道器件。数据集包含电学特性实验数据和COMSOL模拟结果，用于研究低维异质结构的微纳器件性能，数据量约207.75MB，源自国家重点研发计划项目。