Replication Data for: Physical Unclonable Functions based on the post-breakdown current of FDSOI Nanowire Transistors

This dataset contains the Id-Vd, Ig-Vg and Id-Vg characteristics measured on FDSOI nanowire transistors after the Dielectric Breakdown (BD) of the gate stack. The measurements were performed under different conditions (temperature and electrical stress) in order to evaluate the suitability of the post-BD current as entropy source for PUFs applications. In total, 80 devices were measured, under each of the conditions. The dataset corresponds to the set of data obtained from the experimental measurements without any type of processing.