Characterization flowchart and data for Compact Models of GaN-on-Si HEMTs Driven by Wide-Range Current

In order to create compact models for circuit simulations in LTspice, a characterization protocol was established, as shown in the Characterization_flowchart. This procedure was applied to two different transistors, named TLN2 and GS65030. This folder is divided into three parts: 01) A flowchart for the procedure of HEMT transistor characterization using a B1505A curve tracer. 02) A dataset containing static (I–V) and dynamic (C–V) measurements for both HEMT transistors TLN2 and GS65030 03) A set of scripts designed to: - Process measurement data (Id–Vgs, Id–Vds, Id–Vsd) - Fit mathematical models to the different I–V functions - Process measurement data (Crss–Vds, Coss–Vds, Ciss–Vds) - Fit mathematical models to the different C–V functions - Generate a “.lib” file that allows the component to be reused in LTspice A file named "README_HEMT_Modeling.txt" is available for further details on the various functions. All datasets and scripts are fully reusable and are provided to support transparency, reproducibility, and further research. They accompany a journal paper that is currently under preparation.