Research Data supporting "Intrinsic intermolecular photoinduced charge separation in organic radical semiconductors"

These figures present data on the photophysical properties of a spin radical organic semiconductor molecule, P3TTM, and its operation in a photoconductive diode. They provide evidence that when P3TTM molecules are in contact with one another, there can be direct electron transfer between such adjacent molecules. Figure 3 Transient Photoluminescence and magneto-photoluminescence of P3TTM in solution and in a wide bandgap host (TSPO1). a,c, Time-resolved PL spectra of concentrated P3TTM toluene solution (10 mM; a) and P3TTM:TSPO1 (5 wt%; c). b, PL spectra of P3TTM:TSPO1 (5 wt%) under fields of 0 T and 0.7 T at room temperature and PL change under magnetic field with respect to the emission wavelength, normalized to the peak emission at 645 nm. d, Time evolution of the integrated PL fraction (obtained from the time of the PL spectra) of P3TTM:TSPO1 (5 wt%) for molecular emission and redshifted emission band. Figure 4 Transient optical absorption measurements and spectroelectrochemistry of P3TTM in solution and TSPO1. a,b, Picosecond-scale visible TA spectra of diluted P3TTM toluene solution (0.1 mM; a) and P3TTM:TSPO1 (5 wt%; b). λex = 400 nm, 17–27 μJ cm−2 per pulse. c, Spectroelectrochemistry of P3TTM in a degassed tetrahydrofuran solution, showing P3TTM, reduced P3TTM (P3TTM red) and oxidized P3TTM (P3TTM Ox). Figure 5 Magneto-photoluminescence and transient spectroscopies of P3TTM in carbazolebiphenyl, CBP. a, PL spectra of P3TTM:CBP (5 wt%) under fields of 0 T and 0.7 T at room temperature and PL change under magnetic field with respect to the emission wavelength, normalized to the emission at 645 nm. b, Visible TA spectrum of P3TTM:CBP. c,d, Ultraviolet TA spectra of diluted P3TTM toluene solution (0.1 mM; c) and P3TTM:CBP (5 wt%; d). The spectrum break is due to pump laser scattering (λex = 400 nm, 12–13 μJ cm−2 per pulse). Figure 6 Photocurrent measurements of P3TTM and rubrene-based devices a, Device architecture and schematic of the charge separation process in the P3TTM device (left) and rubrene device (right). b, Photocurrent density under 395-nm excitation at 160 mW cm−2 and dark current density (J) comparison of the P3TTM device (left) and rubrene device (right).