SCAPS-1D Device Definition Files for Cu(InₓGa₁₋ₓ)Se₂ Thin-Film Solar Cells (x = 0.2–1.0)

This dataset contains the SCAPS-1D device definition (.def) files for Cu(InₓGa₁₋ₓ)Se₂ (CIGS) thin-film solar cells with varying gallium-to-indium ratios: x = 0.2, 0.4, 0.6, 0.8, and 1.0. CIGS is a key absorber material in photovoltaic research due to its tunable bandgap, high absorption coefficient, and excellent stability. The files provide input parameters for simulating device performance in SCAPS-1D, including: Layer structure and thicknesses Bandgap energies corresponding to different Ga/In ratios Electron affinities and doping concentrations Defect states and recombination parameters These definitions enable systematic investigation of how gallium incorporation influences photovoltaic metrics such as open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and overall efficiency. The dataset is intended to support reproducible research, comparative studies, and educational use in thin-film solar cell modeling. By depositing these files in Zenodo, they are openly accessible for researchers exploring bandgap engineering and device optimization in CIGS-based photovoltaics.