Data for: "Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscope"

ECCI micrographs shown in Figs. 2 to 5 were acquired using the FEI (now Thermo Fisher) Quanta 250 FEG-SEM. Typically, electron beam energy of 30 keV, beam currents between 2 – 4 nA, working distances between 10 – 16 mm and gas pressures between 0.5 – 1 mbar were used to perform ECCI in a low vacuum mode. ECCI micrographs shown in Figs. 6 and 7 were acquired using the Zeiss Auriga 60 with the Gemini column in high vacuum at 2 keV and 20 keV respectively. In order to achieve an acceptable signal to noise, the ECCI micrographs obtained using the gaseous secondary electron detector was acquired with a resolution of 2048 × 1768 pixels with a 100 µs dwell time and a detector bias set between +230 V to +250 V. An Oxford instruments forescatter detector was used to acquire the images shown in Figs. 2b, 3b, 5c, 5d and an Oxford Instruments Nordlys electron backscatter diffraction camera was used to acquire the electron backscatter diffraction pattern shown in Fig. 3d. An FEI quadrant backscattered electron detector was used to collect the image shown in Fig. 2c whereas Figs. 3a, 3c, and Fig. 4 were captured using the off-axis large field of view detector and on-axis gaseous secondary electron detector respectively. We used an Everhart-Thornley detector to acquire the ECCI micrographs displayed in Figs. 5a and 5b.