Kinetics of H/He nanobubble formation in Si implanted wafer by XPCS

We propose XPCS measurements (transmission geometry) of the atomic diffusion and gas coalescence of H/He implantation in Si to gain insights into the kinetics of the first step...我们针对硅（Si）中氢/氦注入诱导的原子扩散与气体聚结过程，提出了采用透射几何构型的X射线光子关联光谱（XPCS）测量方案，以期深入洞悉其第一步过程的动力学机制。