Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs

The trench gate or U-groove MOSFET (UMOSFET) has become widely adopted as a semiconductor device globally, gradually replacing the traditional double-diffused MOSFET (DMOSFET) in many applications. Evaluating the reliability of UMOSFETs regarding neutron-induced radiation effects is crucial for understanding their response to ubiquitous atmospheric neutrons. This study presents comparative experimental and computational results of Single-Event Effects induced by monoenergetic fast neutrons in UMOS and DMOS power transistors. Experiments demonstrate that UMOSFETs exhibit premature particle-induced charge multiplication effects compared to similarly rated DMOSFETs, which may favor destructive radiation effects, such as Single-Event Burnout, when operating in the terrestrial radiation environment.

沟槽栅或U形槽MOSFET（UMOSFET）在全球范围内已得到广泛采用，逐渐取代了在众多应用中传统的双扩散MOSFET（DMOSFET）。评估UMOSFET在受中子诱导辐射效应影响下的可靠性，对于理解其对普遍存在的大气中子的响应至关重要。本研究呈现了由单能快中子引起的单事件效应在UMOS和DMOS功率晶体管中的比较实验和计算结果。实验表明，与同等等级的DMOSFET相比，UMOSFET表现出由粒子诱导的提前电荷倍增效应，这在地球辐射环境中可能有利于破坏性辐射效应，如单事件烧毁的发生。