Screening of functional perovskite thin films for various solid-state devices application

Thin film perovskite materials can be integrated as an elementary cell in solid state devices, such as thermal transistors, thermal switches or memristive elements. The phase changes related to the oxygen content, the point defects leading to strain relaxation on the films, and the formation of domain walls play elemental roles in the functionality of these oxides. We will explore the feasibility of studying of such features with Dark Field X-ray Microscopy. We propose a screening of the following: LaMnO3, where resistance changes are related to phase changes. LaCoO3/SrTiO3 multilayers where ferromagnetism is enhanced by the alternance of the two layers. Here we expect to observe strain relaxation through point defects. Finally, PbTiO3 ferroelectric thin films where micrometric worm-like features have been found through piezo response force microscopy studies, which are expectedly pinned through point defects surrounding the worm-like shapes.