Supplementary Information Vertical Diodes on n-type β-Ga2O3 using p-Cu2O for Heterojunction Formation and Edge Termination

Supplementary material provides detailed XPS and XRD
characterization of Cu2O films, reverse bias C-V measure
ments, forward and reverse J-V characteristics of JBSDs,
TE-fitted J-V-T analysis, extracted diode parameters (SBH,
η, Ron,sp, and Von), TCAD-simulated E-field distributions
for various SBD designs, Cu2O thickness, and the effect of
interface traps along with RT and temperature-dependent
forward I-V data, and reverse switching measurement data.