Atomic layer deposition of calcium fluoride for barrier coating applications
收藏Mendeley Data2024-01-31 更新2024-06-28 收录
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https://dataverse.jpl.nasa.gov/citation?persistentId=doi:10.48577/jpl.OSO0JT
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We report on the development of an atomic layer deposition (ALD) process for calcium fluoride thin films using bis(N,N-di-i-propylformamidinato)calcium(II) and anhydrous HF as reactants. Deposition rates are observed to be linear versus the number of ALD cycles performed, and vary between 0.4 and 0.3 Å/cycle at substrate temperatures ranging from 175 °C to 250 °C, respectively. The optical properties of the resulting nanocrystalline CaF2 films were characterized by spectroscopic ellipsometry and show good transparency down to a UV wavelength of 193 nm, and good agreement with reference refractive index parameters. One motivation for the development of this ALD process is for chemical barrier applications in fluorine-containing chemistries. The robustness of the coating was tested by reactive ion etching of CaF2 films deposited on silicon in an SF6 plasma, and yielded an etch selectivity over silicon greater than 2000:1 at a plasma power of 300 W.
创建时间：
2024-01-31
