Binary III-V Semiconductor Plasma Etch Rates

Etch rate data gathered from plasma etching results reported in the literature for the main binary III-Vs. This dataset provides detailed information on the plasma etching of binary III-V semiconductors reported in the literautre. Each entry is identified by the last name of the first author and publication date and includes a link to the source or publication, the III-V material that was etched, the technique used for etching, the main chemical etchant(s) used, and the associated etch rate or range of etch rates. Etch rates were either extracted directly from the text or obtained by digitizing figures.本数据集收录了已发表文献中针对主流二元III-V族半导体（III-V semiconductor）的等离子刻蚀（plasma etching）实验所得的刻蚀速率数据。 本数据集详细提供了已发表文献中关于二元III-V族半导体等离子刻蚀的相关信息。每条数据条目均以第一作者姓氏与发表年份作为唯一标识，包含原始文献的来源链接、被刻蚀的III-V族半导体材料、所用刻蚀工艺、主要化学刻蚀剂，以及对应的刻蚀速率或速率区间。刻蚀速率数据既可直接从文献正文提取，也可通过数字化处理文献配图获得。

搜集汇总

背景与挑战

背景概述

该数据集汇总了文献中报告的二元III-V族半导体等离子体刻蚀速率数据，包括材料、刻蚀技术、化学刻蚀剂和刻蚀速率等关键参数。数据以结构化条目形式呈现，每个条目通过作者和出版日期标识，并链接至原始来源，便于研究和比较不同刻蚀条件下的性能。