Data set supporting "Directly correlated microscopy of trench defects in InGaN quantum wells"

The data behind the plots in figures 3, 4, 6 & 7 in the corresponding manuscript are provided here.

The data from figure 3 captures the relationship between topographic measurements from line profiles in the atomic force microscope (AFM) and cathodoluminescence (CL) in the scanning electron microscope (SEM). The trench thickness (measured 2 nm below the higher adjoining terrace of the surrounding material) and the prominence of the enclosed material (calculated as the height of the enclosed material relative to the average height of the surrounding material to the left and right) recorded in the AFM are shown. Similarly, the calculated redshift in CL emission from the quantum wells (QWs) enclosed by the trench defect (relative to the surrounding QWs) and the ratio of the intensity of CL emission from inside and outside the defect volume are given. Definitions of these parameters are given in the methods section of the manuscript.

The data from figure 4 plotted the CL emission inside and outside the three trench defects chosen for further investigation (A, B and C) along with AFM height images of the defects, and data used to plot the CL spectra inside and outside the trench defects is given (with the relevant measured parameters given in the main manuscript text).

In Figure 6 profiles of the atomic fraction of indium measured by energy dispersive X-ray spectroscopy in the scanning transmission electron microscope (STEM-EDX) throughout the QW stack are shown for wells contained inside trench defects A, B and C along with the profile from QWs adjacent to trench C; the atomic fraction of indium vs. position (along the growth direction (nm)) is given here for each profile.

Figure 7 shows the QW width measured inside and outside trench defect C (using high-angle annular-dark-field (HAADF) imaging in STEM). Here, we provide the mean QW width measured for each QW in the stack along with the standard deviation and standard error of these measurements.

本数据集包含了相应手稿中图3、4、6及7所示的图表背后的数据。图3中的数据揭示了原子力显微镜（AFM）中线条轮廓的地形测量值与扫描电子显微镜（SEM）中的阴极发光（CL）之间的关系。展示了记录于AFM中的沟槽厚度（在周围材料较高相邻台地下方2纳米处测量）以及封闭材料的显著程度（计算为封闭材料相对于周围材料左右两侧平均高度的相对高度）。同样，提供了沟槽缺陷（相对于周围量子阱（QWs））内CL发射的红移计算值以及缺陷内部和外部CL发射强度的比值。这些参数的定义可在手稿的方法部分找到。图4中的数据描绘了用于进一步研究的三个沟槽缺陷（A、B和C）内外的CL发射，以及缺陷的AFM高度图像，并提供了用于绘制沟槽缺陷内外CL光谱的数据（相关测量参数已在手稿正文中给出）。图6展示了通过扫描透射电子显微镜（STEM-EDX）测量的整个量子阱（QW）堆叠中铟的原子分数剖面，包括位于沟槽缺陷A、B和C内部的阱以及紧邻沟槽C的量子阱的剖面；为每个剖面提供了铟的原子分数与位置（沿生长方向（纳米））的关系。图7展示了沟槽缺陷C内部和外部测量的量子阱宽度（使用STEM中的高角环形暗场（HAADF）成像）。在此，我们提供了对堆叠中每个量子阱测量的平均量子阱宽度及其测量标准差和标准误。