C-V measurements on the n-type 4H-SiC Schottky barrier diodes

Name: C-V measurements on the n-type 4H-SiC Schottky barrier diodes
Published: 2018-10-22T00:00:00+08:00

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碳化硅材料表征

半导体缺陷

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资源简介：

This dataset contains capacitance-voltage measurements used for calculation of concentrations of EH1, Z1(=/0), Z2(=/0) and EH3 deep levels in the as-grown and neutron irradiated samples.

创建时间：

2018-10-22

C-V measurements on the n-type 4H-SiC Schottky barrier diodes

资源简介：

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