Supplementary1
收藏Figshare2025-03-19 更新2026-04-28 收录
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https://figshare.com/articles/dataset/Supplementary1/28465736
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资源简介：
Supplementary information about the study. (A) Diffusion and surface segregation models in InGaN (B) Diffusion and surface segregation models in GaN (C) IQE dependence on the defect concentration (D) Sample design for the GI sample series (E) Secondary ion mass spectrometry analysis (F) Surface morphology study of the ammonia flow series
创建时间：
2025-03-19
